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Don't hesitate to contact me.

Tel:  +49 3379 444253

Nutzen Sie auch das Kontaktformular.

Use also the contact formular.

New Edition:

Handbook of Crystal Growth, Elsevier 2015, Eds: T. Nishinaga (Vol 1a,b), P. Rudolph (Vol. 2a,b), T. Kuech (Vol. 3a,b), 2015

http://store.elsevier.com/Handbook-of-Crystal-Growth/isbn-9780444633033/

Review paper:

in the Anniversary Issue: 50 Years of Crystal Research & Technology, January 2017,

P. Rudolph, Dislocation patterning and bunching in crystals and epitaxial
layers, in CRT 52 (2017) 1-15

Research paper

Co-author of Stockmeier et al., Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski method, J. Crystal Growth 491 (2018) 57-65

Lecture courses on crystal growth fundamentals and defects at

North-Western Polytechn Univ in Xi'an  and Nat. Key Lab ASIC at Hebei Semicond. Res. Inst in Shijiazhuang (China), October 08-15, 2017

JSPS Invitational Fellowship including lecture courses at Tohoku University in Senai (Japan) from September 20 until October 20, 2018.