Ich halte Sie auf dem Laufenden.    I will keep you informed.

Peter Rudolph:

International Lectures on Crystal Growth

December 09 - 13, 2019

at IKZ Berlin

Detailed informations are given via the below flyer and following link:




Review paper in

50-th year of publ. of Crystal Research and Technology 52 (2017)1-15:

"Dislocation patterning and bunching in crystals and epitaxial layers"



New Edition:

Handbook of Crystal Growth, Elsevier 2015, Eds: T. Nishinaga (Vol 1a,b), P. Rudolph (Vol. 2a,b), T. Kuech (Vol. 3a,b), see below



JSPS Invitational Fellowship

including lecture courses at Tohoku University in Senai (Japan) from September 20 until October 20, 2018.


Lecture courses on crystal growth fundamentals, defects and µ-PD method at

State Key Laboratory of Crystal Materials, Shandong University, Jinan, PR China, September 22-28, 2019



International Lectures on Crystal Growth
PDF-Dokument [248.4 KB]
Rudolph, Dislocation Patterning... CRT 52 (2017) 1
Rudolph Dislocation patterning Review CR[...]
PDF-Dokument [2.1 MB]
Flyer HB Vol II
Flyer HB of CG Vol II.pdf
PDF-Dokument [431.8 KB]
Fundamentals and engineering of defects - a review
Rudolph Defect Engineering.pdf
PDF-Dokument [3.6 MB]
640 kg mc-Si under TMF
640 kg TMF final printed.pdf
PDF-Dokument [1.7 MB]
TMF Efficiency at crystallization
Dropka et al. JCG_efficiency.pdf
PDF-Dokument [2.8 MB]
Influence of travelling magnetic fields on S–L interface shapes of materials with different electrical conductivities
Dropka TMF in various materials.pdf
PDF-Dokument [1.2 MB]
Numerical analysis of the influence of ultrasonic vibration on crystallization processes.
Ubbenjans, Ultrasonic vibration.pdf
PDF-Dokument [565.6 KB]
Characterization of mc-Si solidified in TMF
Kiessling G1 JCG.pdf
PDF-Dokument [1.4 MB]
Rectangular Cz crystals
Jap. J. Crystal Growth galley manuscript[...]
PDF-Dokument [3.9 MB]
Numerical modelling of Czochralski growth of quadratic silicon crystals by means of a travelling magnetic field
Miller rectangular Cz.pdf
PDF-Dokument [609.6 KB]
Verfahren zur Durchmischung von elektrisch leitenden Schmelzen bei Kristallisationsprozessen [Method for mixing of electrically conducting melts during processes of crystallization].
Mischung DE102008027359B4.pdf
PDF-Dokument [1.2 MB]
Verfahren und Anordnung zur Herstellung von Kristallblöcken hoher Reinheit und dazugehörige Kristallisationsanlage
DE 10 2010 028 173.pdf
PDF-Dokument [754.2 KB]
Kristallisationsanlage und Kristallisationsverfahren zur Herstellung eines Blocks aus einem Material, dessen Schmelze elektrisch leitend ist.
PDF-Dokument [916.0 KB]