Ich halte Sie auf dem Laufenden. I will keep you informed.
Review paper in
50-th year of publ. of Crystal Research and Technology 52 (2017)1-15:
"Dislocation patterning and bunching in crystals and epitaxial layers"
http://onlinelibrary.wiley.com/doi/10.1002/crat.201600171/full
New Edition:
Handbook of Crystal Growth, Elsevier 2015, Eds: T. Nishinaga (Vol 1a,b), P. Rudolph (Vol. 2a,b), T. Kuech (Vol. 3a,b), see below
http://store.elsevier.com/Handbook-of-Crystal-Growth/isbn-9780444633033/
JSPS Invitational Fellowship
including lecture courses at Tohoku University in Senai (Japan) from September 20 until October 20, 2018.
Lecture courses on crystal growth fundamentals, defects and µ-PD method at
State Key Laboratory of Crystal Materials, Shandong University, Jinan, PR China, September 22-28, 2019
Rudolph, Dislocation Patterning... CRT 52 (2017) 1
Rudolph Dislocation patterning Review CR[...]
PDF-Dokument [2.1 MB]
Rudolph Dislocation patterning Review CR[...]
PDF-Dokument [2.1 MB]
Fundamentals and engineering of defects - a review
Rudolph Defect Engineering.pdf
PDF-Dokument [3.6 MB]
Rudolph Defect Engineering.pdf
PDF-Dokument [3.6 MB]
Influence of travelling magnetic fields on S–L interface shapes of materials with different electrical conductivities
Dropka TMF in various materials.pdf
PDF-Dokument [1.2 MB]
Dropka TMF in various materials.pdf
PDF-Dokument [1.2 MB]
Numerical analysis of the influence of ultrasonic vibration on crystallization processes.
Ubbenjans, Ultrasonic vibration.pdf
PDF-Dokument [565.6 KB]
Ubbenjans, Ultrasonic vibration.pdf
PDF-Dokument [565.6 KB]
Numerical modelling of Czochralski growth of quadratic silicon crystals by means of a travelling magnetic field
Miller rectangular Cz.pdf
PDF-Dokument [609.6 KB]
Miller rectangular Cz.pdf
PDF-Dokument [609.6 KB]
Verfahren zur Durchmischung von elektrisch leitenden Schmelzen bei Kristallisationsprozessen [Method for mixing of electrically conducting melts during processes of crystallization].
Mischung DE102008027359B4.pdf
PDF-Dokument [1.2 MB]
Mischung DE102008027359B4.pdf
PDF-Dokument [1.2 MB]
Verfahren und Anordnung zur Herstellung von Kristallblöcken hoher Reinheit und dazugehörige Kristallisationsanlage
DE 10 2010 028 173.pdf
PDF-Dokument [754.2 KB]
DE 10 2010 028 173.pdf
PDF-Dokument [754.2 KB]
Kristallisationsanlage und Kristallisationsverfahren zur Herstellung eines Blocks aus einem Material, dessen Schmelze elektrisch leitend ist.
DE102010041061B4.pdf
PDF-Dokument [916.0 KB]
DE102010041061B4.pdf
PDF-Dokument [916.0 KB]
Druckversion